HJT in details
Front side and rear side metallization
Conductive layer of transparent conductive oxide
Amorphous silicon semiconductor layer
Textured N-type monocrystalline silicon wafer
Front side and rear side metallization
Conductive layer of transparent conductive oxide
Amorphous silicon semiconductor layer
Textured N-type monocrystalline silicon wafer
HJT PV Technology advantages
up to 25%
High efficiency
makes it possible to save place and install fewer support structures.
As a result, your CAPEX will be decreased
As a result, your CAPEX will be decreased
-0.26% / °C
Low temperature coefficient
leads to 10% increase in output in hot climates and low light conditions
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>90%
Ultra High bifaciality
allows to increase electricity generation up to 20%,
which provides short payback periods
which provides short payback periods
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HJT vs. mass-market crystalline PV technologies
Lifespan
Average lifetime values for cell type without loss of efficiency
up to 25 years
up to 30 years
Temperature Coefficient
Average temperature coefficient for cell type
-0.38%/°C
-0.26%/°C
Highest Recorded Efficiency
Highest cell efficiency ever recorded during operational usage
23.5%
25%
Market Share
36%
10%
Powering business
with Solar
Reduce costs
Reducing electricity bills of households and small enterprise
Additional power
Fast and easy power supply at your site
Reduce carbon footprint
By reducing your carbon footprint, you demonstrate goodwill toward the planet, stewardship within your community, and leadership within your industry
Warranty
Official factory warranty from the manufacturer for the product 12-15 years and for production up to 30 years
Products
